In stock:
10
$9.39840
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $9.39840 | |
| 10 | $9.01776 | |
| 30 | $8.35894 | |
| 100 | $7.78469 |
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Request for IPB60R060C7ATMA1
IPB60R060C7ATMA1
MOSFET N-CH 650V 35A TO263-3
Order Code:
CIS1461630
Manufacturer Part No:
IPB60R060C7ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 35A (Tc) 162W (Tc) Surface Mount D2PAK (TO-263)
Technical Datasheet:
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IPB60R060C7ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ C7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK (TO-263) |
| Base Product Number | IPB60R060 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 162W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 15.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 800µA |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |