In stock:
10
$2.27860
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.27860 | |
| 10 | $2.00266 | |
| 30 | $1.83518 | |
| 100 | $1.69482 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB80N06S2L07ATMA3
IPB80N06S2L07ATMA3
MOSFET N-CH 55V 80A TO263-3
Order Code:
CIS1457640
Manufacturer Part No:
IPB80N06S2L07ATMA3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 55 V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
Buy with Confidence
IPB80N06S2L07ATMA3 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
| Base Product Number | IPB80N |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 210W (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |