In stock:
20
$1.87060
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $1.87060 | |
10 | $1.64014 | |
30 | $1.50303 | |
100 | $1.36423 | |
500 | $1.23852 | |
1000 | $1.20972 |
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Request for IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1
MOSFET N-CH 100V 60A TO252-3
Order Code:
CIS1456476
Manufacturer Part No:
IPD60N10S4L12ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Technical Datasheet:
IPD60N10S4L12ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | Automotive, AEC-Q101, HEXFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3-313 |
Base Product Number | IPD60N10 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 94W (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |