In stock:
1
$2.48930
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $2.48930 | |
10 | $2.18312 | |
30 | $2.00115 | |
100 | $1.81644 | |
500 | $1.64866 | |
1000 | $1.61107 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPD60R180P7ATMA1
IPD60R180P7ATMA1
MOSFET N-CH 650V 18A TO252-3
Order Code:
CIS1455999
Manufacturer Part No:
IPD60R180P7ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 18A (Tc) 72W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
IPD60R180P7ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ P7 |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3 |
Base Product Number | IPD60R |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 72W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |