In stock:
20
$1.33940
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.33940 | |
| 10 | $1.16983 | |
| 30 | $1.06924 | |
| 100 | $0.96664 | |
| 500 | $0.91977 | |
| 1000 | $0.89901 |
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Request for IPD650P06NMATMA1
IPD650P06NMATMA1
MOSFET P-CH 60V 22A TO252-3
Order Code:
CIS1455925
Manufacturer Part No:
IPD650P06NMATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
P-Channel 60 V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
Technical Datasheet:
Buy with Confidence
IPD650P06NMATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-313 |
| Base Product Number | IPD650 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 83W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.04mA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 30 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |