×

:

Not a valid Time
This is a required field.
Out of stock
$0.00000
Standard Package: 2500

* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.

Request for IPD65R600E6

IPD65R600E6

COOLMOS N-CHANNEL POWER MOSFET

Order Code:
CIS1461536
Manufacturer Part No:
IPD65R600E6
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3-313
Technical Datasheet:
Buy with Confidence

IPD65R600E6 Information

More Information
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-313
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 63W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 0000.00.0000
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Affected