In stock:
8
$1.11190
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $1.11190 | |
10 | $0.94778 | |
30 | $0.85794 | |
100 | $0.75654 | |
500 | $0.68037 | |
1000 | $0.66002 |
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Request for IPD80R1K4P7ATMA1
IPD80R1K4P7ATMA1
MOSFET N-CH 800V 4A TO252
Order Code:
CIS1456403
Manufacturer Part No:
IPD80R1K4P7ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 800 V 4A (Tc) 32W (Tc) Surface Mount PG-TO252-2
Technical Datasheet:
IPD80R1K4P7ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-2 |
Base Product Number | IPD80R1 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 32W (Tc) |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
FET Feature | Super Junction |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |