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In stock: 5
$0.66370
Standard Package: 2500
Quantity Unit Price
1 $0.66370
10 $0.61127
30 $0.57888
100 $0.54496
500 $0.50488
1000 $0.49870

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Request for IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

MOSFET N-CH 800V 3A TO252-3

Order Code:
CIS1455991
Manufacturer Part No:
IPD80R2K0P7ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 800 V 3A (Tc) 24W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
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IPD80R2K0P7ATMA1 Information

More Information
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Base Product Number IPD80R2
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 24W (Tc)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 500 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected