In stock:
2
$0.66020
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.66020 | |
| 10 | $0.57140 | |
| 30 | $0.51588 | |
| 100 | $0.45884 | |
| 500 | $0.43342 | |
| 1000 | $0.42233 |
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Request for IPD80R2K8CEATMA1
IPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3
Order Code:
CIS1457728
Manufacturer Part No:
IPD80R2K8CEATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
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IPD80R2K8CEATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ CE |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| Base Product Number | IPD80R2 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 42W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |