In stock:
6
$1.17920
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.17920 | |
| 30 | $1.09253 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPN80R600P7ATMA1
IPN80R600P7ATMA1
MOSFET N-CH 800V 8A SOT223
Order Code:
CIS1456153
Manufacturer Part No:
IPN80R600P7ATMA1
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
N-Channel 800 V 8A (Tc) 7.4W (Tc) Surface Mount PG-SOT223
Technical Datasheet:
Buy with Confidence
IPN80R600P7ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ P7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223 |
| Base Product Number | IPN80R600 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 7.4W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 500 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |