In stock:
8
$1.34870
Standard Package:
1
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.34870 | |
| 10 | $1.13911 | |
| 30 | $1.02366 | |
| 100 | $0.89378 | |
| 500 | $0.79465 | |
| 1000 | $0.76862 |
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Request for IPP086N10N3G
IPP086N10N3G
POWER FIELD-EFFECT TRANSISTOR, 8
Order Code:
CIS1460940
Manufacturer Part No:
IPP086N10N3G
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Technical Datasheet:
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IPP086N10N3G Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ 3 |
| Package | Bulk |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3-1 |
| Base Product Number | IRF3007 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 125W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8542.39.0001 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |