In stock:
161835
$0.00000
Standard Package:
1500
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPS80R2K4P7AKMA1
IPS80R2K4P7AKMA1
MOSFET N-CH 800V 2.5A TO251-3
Order Code:
CIS1461337
Manufacturer Part No:
IPS80R2K4P7AKMA1
Manufacturer:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Detailed Description:
N-Channel 800 V 2.5A (Tc) 22W (Tc) Through Hole PG-TO251-3
Technical Datasheet:
IPS80R2K4P7AKMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ P7 |
Package | Tube |
Product Status | Not For New Designs |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | PG-TO251-3 |
Base Product Number | IPS80R2 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 22W (Tc) |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 500 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |