In stock:
1691
$0.00000
Standard Package:
1
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Request for IPW65R190E6
IPW65R190E6
N-CHANNEL POWER MOSFET
Order Code:
CIS1461435
Manufacturer Part No:
IPW65R190E6
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-41
Technical Datasheet:
IPW65R190E6 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ |
Package | Bulk |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3-41 |
Base Product Number | IPP80R1 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 151W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 730µA |
Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |