In stock:
38
$0.44930
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.44930 | |
| 10 | $0.37526 | |
| 30 | $0.33819 | |
| 100 | $0.30202 | |
| 500 | $0.27982 | |
| 1000 | $0.26828 |
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Request for IRF5801TRPBF
IRF5801TRPBF
MOSFET N-CH 200V 600MA MICRO6
Order Code:
CIS1456429
Manufacturer Part No:
IRF5801TRPBF
Manufacturer:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Detailed Description:
N-Channel 200 V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Technical Datasheet:
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IRF5801TRPBF Information
| Mfr | Infineon Technologies |
|---|---|
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | Micro6™(TSOP-6) |
| Base Product Number | IRF5801 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 360mA, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |