In stock:
63
$23.67160
Standard Package:
450
Quantity | Unit Price | |
---|---|---|
1 | $23.67160 | |
30 | $22.64425 |
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Request for NTH4L014N120M3P
NTH4L014N120M3P Information
Mfr | onsemi |
---|---|
Series | - |
Package | Tube |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Supplier Device Package | TO-247-4L |
Base Product Number | NTH4L014 |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Power Dissipation (Max) | 686W (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 127A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Rds On (Max) @ Id, Vgs | 20mOhm @ 74A, 18V |
Vgs(th) (Max) @ Id | 4.63V @ 37mA |
Gate Charge (Qg) (Max) @ Vgs | 329 nC @ 18 V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 6230 pF @ 800 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | REACH Unaffected |