In stock:
3
$113.38370
Standard Package:
30
Quantity | Unit Price | |
---|---|---|
1 | $113.38370 | |
200 | $43.87949 | |
500 | $42.33747 | |
1000 | $41.57780 |
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Request for NVH4L022N120M3S
NVH4L022N120M3S Information
Mfr | onsemi |
---|---|
Series | Automotive, AEC-Q101 |
Package | Tube |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Supplier Device Package | TO-247-4L |
Base Product Number | NTNS3166 |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Power Dissipation (Max) | 352W (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 18V |
Vgs(th) (Max) @ Id | 4.4V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 18 V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 800 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | REACH Unaffected |