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In stock: 3
$113.38370
Standard Package: 30
Quantity Unit Price
1 $113.38370
200 $43.87949
500 $42.33747
1000 $41.57780

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Request for NVH4L022N120M3S

NVH4L022N120M3S

SIC MOS TO247-4L 22MOHM 1200V

Order Code:
CIS1194911
Manufacturer Part No:
NVH4L022N120M3S
Manufacturer:
Package / Case:
TO-247-4
Detailed Description:
N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
Technical Datasheet:
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NVH4L022N120M3S Information

More Information
Mfr onsemi
Series Automotive, AEC-Q101
Package Tube
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4L
Base Product Number NTNS3166
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 352W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3175 pF @ 800 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected