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Standard Package: 1000

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Request for PMT200EPEA115

PMT200EPEA115

P-CHANNEL MOSFET

Order Code:
CIS1262866
Manufacturer Part No:
PMT200EPEA115
Manufacturer:
Package / Case:
TO-220-5
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PMT200EPEA115 Information

More Information
Mfr NXP USA Inc.
Series *
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-5
Supplier Device Package TO-220-5
Base Product Number BUK7510
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 221W (Tc)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3140 pF @ 25 V
FET Feature Current Sensing
More Information
ECCN EAR99
HTSUS 8541.21.0095
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined