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In stock: 1030
$0.00000
Standard Package: 450

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Request for SCT2450KEGC11

SCT2450KEGC11

1200V, 10A, THD, SILICON-CARBIDE

Order Code:
CIS1398103
Manufacturer Part No:
SCT2450KEGC11
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 1200 V 10A (Tc) 85W (Tc) Through Hole TO-247N
Technical Datasheet:
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SCT2450KEGC11 Information

More Information
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
Operating Temperature 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Base Product Number SCT2450
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 85W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 18 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 463 pF @ 800 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected