In stock:
3
$31.82450
Standard Package:
30
Quantity | Unit Price | |
---|---|---|
1 | $31.82450 | |
30 | $30.53561 |
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Request for SCTWA90N65G2V
SCTWA90N65G2V
SILICON CARBIDE POWER MOSFET 650
Order Code:
CIS1163808
Manufacturer Part No:
SCTWA90N65G2V
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Technical Datasheet:
SCTWA90N65G2V Information
Mfr | STMicroelectronics |
---|---|
Series | - |
Package | Tube |
Product Status | Active |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 Long Leads |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Power Dissipation (Max) | 565W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 119A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |