In stock:
3
$31.82450
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $31.82450 | |
| 30 | $30.53561 |
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Request for SCTWA90N65G2V
SCTWA90N65G2V
SILICON CARBIDE POWER MOSFET 650
Order Code:
CIS1163808
Manufacturer Part No:
SCTWA90N65G2V
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Technical Datasheet:
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SCTWA90N65G2V Information
| Mfr | STMicroelectronics |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 Long Leads |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 565W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |