Out of stock
$0.10700
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $0.10700 | |
10 | $0.08781 | |
30 | $0.07953 | |
100 | $0.06930 | |
500 | $0.06476 | |
1000 | $0.06197 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SI1062X-T1-GE3
SI1062X-T1-GE3
MOSFET N-CH 20V SC89-3
Order Code:
CIS1000582
Manufacturer Part No:
SI1062X-T1-GE3
Manufacturer:
Package / Case:
SC-89, SOT-490
Detailed Description:
N-Channel 20 V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3
Technical Datasheet:
SI1062X-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-89, SOT-490 |
Supplier Device Package | SC-89-3 |
Base Product Number | SI1062 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 220mW (Ta) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 530mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.7 nC @ 8 V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 10 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.21.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |