Out of stock
$0.25580
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.25580 | |
| 10 | $0.21065 | |
| 30 | $0.19139 | |
| 100 | $0.16724 | |
| 500 | $0.15642 | |
| 1000 | $0.15000 |
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Request for SI2301BDS-T1-GE3
SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3
Order Code:
CIS1001188
Manufacturer Part No:
SI2301BDS-T1-GE3
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
P-Channel 20 V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Technical Datasheet:
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SI2301BDS-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | SI2301 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 6 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.21.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |