Out of stock
$0.46960
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.46960 | |
| 200 | $0.18174 | |
| 500 | $0.17544 | |
| 1000 | $0.17220 |
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Request for SI2338DS-T1-GE3
SI2338DS-T1-GE3
MOSFET N-CH 30V 6A SOT23
Order Code:
CIS1000194
Manufacturer Part No:
SI2338DS-T1-GE3
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
N-Channel 30 V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Technical Datasheet:
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SI2338DS-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | SI2338 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 424 pF @ 15 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |