Out of stock
$0.24050
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.24050 | |
| 10 | $0.19868 | |
| 30 | $0.18069 | |
| 100 | $0.15825 | |
| 500 | $0.14834 | |
| 1000 | $0.14228 |
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Request for SI2377EDS-T1-GE3
SI2377EDS-T1-GE3
MOSFET P-CH 20V 4.4A SOT23-3
Order Code:
CIS1000672
Manufacturer Part No:
SI2377EDS-T1-GE3
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
P-Channel 20 V 4.4A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
Technical Datasheet:
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SI2377EDS-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | SI2377 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 1.25W (Ta), 1.8W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 3.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 6 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |