Out of stock
$0.31440
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.31440 | |
| 10 | $0.25077 | |
| 30 | $0.22495 | |
| 100 | $0.19116 | |
| 500 | $0.17625 | |
| 1000 | $0.16669 |
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Request for SI2387DS-T1-GE3
SI2387DS-T1-GE3
P-CHANNEL -80V SOT-23, 164 M @ 1
Order Code:
CIS1001402
Manufacturer Part No:
SI2387DS-T1-GE3
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
P-Channel 80 V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Technical Datasheet:
Buy with Confidence
SI2387DS-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta), 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 164mOhm @ 2.1A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 395 pF @ 40 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |