Out of stock
$0.62370
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.62370 | |
| 10 | $0.52603 | |
| 30 | $0.47644 | |
| 100 | $0.42836 | |
| 500 | $0.39973 | |
| 1000 | $0.38470 |
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Request for SI3477DV-T1-GE3
SI3477DV-T1-GE3
MOSFET P-CH 12V 8A 6TSOP
Order Code:
CIS1000162
Manufacturer Part No:
SI3477DV-T1-GE3
Manufacturer:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Detailed Description:
P-Channel 12 V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Technical Datasheet:
Buy with Confidence
SI3477DV-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Base Product Number | SI3477 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 9A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 6 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |