Out of stock
$1.13590
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $1.13590 | |
10 | $0.95416 | |
30 | $0.86192 | |
100 | $0.76969 | |
500 | $0.71698 | |
1000 | $0.68801 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SI4062DY-T1-GE3
SI4062DY-T1-GE3
MOSFET N-CH 60V 32.1A 8SO
Order Code:
CIS1000145
Manufacturer Part No:
SI4062DY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 60 V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SOIC
Technical Datasheet:
SI4062DY-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | SI4062 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 7.8W (Tc) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 32.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 30 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |