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$1.46160
Standard Package: 2500
Quantity Unit Price
1 $1.46160
200 $0.56695
500 $0.54664
1000 $0.53801

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Request for SI4090BDY-T1-GE3

SI4090BDY-T1-GE3

N-CHANNEL 100-V (D-S) MOSFET SO-

Order Code:
CIS1000176
Manufacturer Part No:
SI4090BDY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 100 V 12.2A (Ta), 18.7A (Tc) 3.1W (Ta), 7.4W (Tc) Surface Mount 8-SOIC
Technical Datasheet:
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SI4090BDY-T1-GE3 Information

More Information
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SIS413
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 3.1W (Ta), 7.4W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12.2A (Ta), 18.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3570 pF @ 50 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected