Out of stock
$3.51910
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $3.51910 | |
200 | $1.36400 | |
500 | $1.31685 | |
1000 | $1.29292 |
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Request for SI4100DY-T1-E3
SI4100DY-T1-E3
MOSFET N-CH 100V 6.8A 8SO
Order Code:
CIS1000177
Manufacturer Part No:
SI4100DY-T1-E3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 100 V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
Technical Datasheet:
SI4100DY-T1-E3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | SI4100 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 63mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 50 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |