Out of stock
$0.94270
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $0.94270 | |
200 | $0.36492 | |
500 | $0.35219 | |
1000 | $0.34578 |
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Request for SI4153DY-T1-GE3
SI4153DY-T1-GE3
P-CHANNEL 30-V (D-S) MOSFET SO-8
Order Code:
CIS1001283
Manufacturer Part No:
SI4153DY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
P-Channel 30 V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
SI4153DY-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen III |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Power Dissipation (Max) | 3.1W (Ta), 5.6W (Tc) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 14.3A (Ta), 19.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 15 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |