Out of stock
$2.05650
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.05650 | |
| 10 | $1.75378 | |
| 30 | $1.58577 | |
| 100 | $1.39842 | |
| 500 | $1.19195 | |
| 1000 | $1.15349 |
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Request for SI4386DY-T1-E3
SI4386DY-T1-E3
MOSFET N-CH 30V 11A 8SO
Order Code:
CIS1001135
Manufacturer Part No:
SI4386DY-T1-E3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 30 V 11A (Ta) 1.47W (Ta) Surface Mount 8-SOIC
Technical Datasheet:
Buy with Confidence
SI4386DY-T1-E3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4386 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 1.47W (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |