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Out of stock
$2.05650
Standard Package: 2500
Quantity Unit Price
1 $2.05650
10 $1.75378
30 $1.58577
100 $1.39842
500 $1.19195
1000 $1.15349

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Request for SI4386DY-T1-E3

SI4386DY-T1-E3

MOSFET N-CH 30V 11A 8SO

Order Code:
CIS1001135
Manufacturer Part No:
SI4386DY-T1-E3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 30 V 11A (Ta) 1.47W (Ta) Surface Mount 8-SOIC
Technical Datasheet:
Buy with Confidence

SI4386DY-T1-E3 Information

More Information
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4386
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 1.47W (Ta)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected