Out of stock
$0.27020
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 5 | $0.27020 | |
| 50 | $0.21581 | |
| 150 | $0.19249 | |
| 500 | $0.16334 | |
| 2500 | $0.15039 | |
| 5000 | $0.14261 |
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Request for SI4435FDY-T1-GE3
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
Order Code:
CIS1000570
Manufacturer Part No:
SI4435FDY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
Technical Datasheet:
Buy with Confidence
SI4435FDY-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4435 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 4.8W (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |