Out of stock
$1.00360
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.00360 | |
| 10 | $0.88528 | |
| 30 | $0.82024 | |
| 100 | $0.74728 | |
| 500 | $0.71476 | |
| 1000 | $0.70001 |
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Request for SI4477DY-T1-GE3
SI4477DY-T1-GE3
MOSFET P-CH 20V 26.6A 8SO
Order Code:
CIS1002269
Manufacturer Part No:
SI4477DY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
P-Channel 20 V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SOIC
Technical Datasheet:
Buy with Confidence
SI4477DY-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4477 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 3W (Ta), 6.6W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 26.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 18A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |