Out of stock
$0.00000
Standard Package:
2500
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Request for SI4666DY-T1-GE3
SI4666DY-T1-GE3
MOSFET N-CH 25V 16.5A 8SO
Order Code:
CIS1000044
Manufacturer Part No:
SI4666DY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 25 V 16.5A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Technical Datasheet:
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SI4666DY-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4666 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1145 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |