Out of stock
$1.17720
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.17720 | |
| 200 | $0.45770 | |
| 500 | $0.44310 | |
| 1000 | $0.43191 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SI4850BDY-T1-GE3
SI4850BDY-T1-GE3
MOSFET N-CH 60V 8.4A/11.3A 8SO
Order Code:
CIS1002196
Manufacturer Part No:
SI4850BDY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
N-Channel 60 V 8.4A (Ta), 11.3A (Tc) 2.5W (Ta), 4.5W (Tc) Surface Mount 8-SO
Technical Datasheet:
Buy with Confidence
SI4850BDY-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | SI4850 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 11.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |