In stock:
50
$0.83720
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.83720 | |
| 200 | $0.32408 | |
| 500 | $0.31253 | |
| 1000 | $0.30692 |
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Request for SI8425DB-T1-E1
SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSP
Order Code:
CIS1001385
Manufacturer Part No:
SI8425DB-T1-E1
Manufacturer:
Package / Case:
4-UFBGA, WLCSP
Detailed Description:
P-Channel 20 V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)
Technical Datasheet:
Buy with Confidence
SI8425DB-T1-E1 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, WLCSP |
| Supplier Device Package | 4-WLCSP (1.6x1.6) |
| Base Product Number | SI8425 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |