Out of stock
$0.27810
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $0.27810 | |
10 | $0.22468 | |
30 | $0.20290 | |
100 | $0.17423 | |
500 | $0.16135 | |
1000 | $0.15437 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIA427ADJ-T1-GE3
SIA427ADJ-T1-GE3
MOSFET P-CH 8V 12A PPAK SC70-6
Order Code:
CIS1001180
Manufacturer Part No:
SIA427ADJ-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® SC-70-6
Detailed Description:
P-Channel 8 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6
Technical Datasheet:
SIA427ADJ-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 |
Supplier Device Package | PowerPAK® SC-70-6 |
Base Product Number | SIA427 |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Power Dissipation (Max) | 19W (Tc) |
Drain to Source Voltage (Vdss) | 8 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 16mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 4 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |