Out of stock
$5.31770
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $5.31770 | |
| 200 | $2.05955 | |
| 500 | $1.98563 | |
| 1000 | $1.95000 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIHB22N60AEL-GE3
SIHB22N60AEL-GE3
MOSFET N-CH 600V 21A D2PAK
Order Code:
CIS1000169
Manufacturer Part No:
SIHB22N60AEL-GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 600 V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Technical Datasheet:
Buy with Confidence
SIHB22N60AEL-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | EL |
| Package | Tube |
| Product Status | Obsolete |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK (TO-263) |
| Base Product Number | SIHB22 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 208W (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1757 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |