Out of stock
$27.29260
Standard Package:
800
| Quantity | Unit Price | |
|---|---|---|
| 1 | $27.29260 | |
| 200 | $10.56497 | |
| 500 | $10.19379 | |
| 800 | $10.00820 |
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Request for SIHB24N65EFT1-GE3
SIHB24N65EFT1-GE3
N-CHANNEL 650V
Order Code:
CIS1000875
Manufacturer Part No:
SIHB24N65EFT1-GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)
Technical Datasheet:
Buy with Confidence
SIHB24N65EFT1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | E |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D²Pak) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 250W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |