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$11.30950
Standard Package: 2000
Quantity Unit Price
1 $11.30950
200 $4.37678
500 $4.22410
1000 $4.14719

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Request for SIJH600E-T1-GE3

SIJH600E-T1-GE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Order Code:
CIS1002032
Manufacturer Part No:
SIJH600E-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 8 x 8
Detailed Description:
N-Channel 60 V 37A (Ta), 373A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
Technical Datasheet:
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SIJH600E-T1-GE3 Information

More Information
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 8 x 8
Supplier Device Package PowerPAK® 8 x 8
Base Product Number SIHB105
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 373A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 0.92Ohm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 212 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 30 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected