Out of stock
$7.50290
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $7.50290 | |
| 200 | $2.90287 | |
| 500 | $2.80008 | |
| 1000 | $2.75281 |
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Request for SIJH800E-T1-GE3
SIJH800E-T1-GE3
N-CHANNEL 80-V (D-S) 175C MOSFET
Order Code:
CIS1002038
Manufacturer Part No:
SIJH800E-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 8 x 8
Detailed Description:
N-Channel 80 V 29A (Ta), 299A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
Technical Datasheet:
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SIJH800E-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 8 x 8 |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 299A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.55mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10230 pF @ 40 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |