Out of stock
$2.83460
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $2.83460 | |
200 | $1.09982 | |
500 | $1.05957 | |
1000 | $1.04172 |
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Request for SIR582DP-T1-RE3
SIR582DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWE
Order Code:
CIS1002304
Manufacturer Part No:
SIR582DP-T1-RE3
Manufacturer:
Package / Case:
PowerPAK® SO-8
Detailed Description:
N-Channel 80 V 28.9A (Ta), 116A (Tc) 5.6W (Ta), 92.5W (Tc) Surface Mount PowerPAK® SO-8
SIR582DP-T1-RE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen V |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Supplier Device Package | PowerPAK® SO-8 |
Base Product Number | SI4835 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 5.6W (Ta), 92.5W (Tc) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 28.9A (Ta), 116A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.4mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3360 pF @ 40 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |