Out of stock
$0.98230
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.98230 | |
| 10 | $0.76521 | |
| 30 | $0.64527 | |
| 100 | $0.51080 | |
| 500 | $0.40333 | |
| 1000 | $0.37642 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIRA12BDP-T1-GE3
SIRA12BDP-T1-GE3
MOSFET N-CH 30V 27A/60A PPAK SO8
Order Code:
CIS1001169
Manufacturer Part No:
SIRA12BDP-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® SO-8
Detailed Description:
N-Channel 30 V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8
Technical Datasheet:
Buy with Confidence
SIRA12BDP-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Base Product Number | SIRA12 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 5W (Ta), 38W (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 15 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |