In stock:
14165
$0.00000
Standard Package:
3000
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIRA20BDP-T1-GE3
SIRA20BDP-T1-GE3
MOSFET N-CH 25V 82A/335A PPAK
Order Code:
CIS1002313
Manufacturer Part No:
SIRA20BDP-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® SO-8
Detailed Description:
N-Channel 25 V 82A (Ta), 335A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Technical Datasheet:
SIRA20BDP-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Supplier Device Package | PowerPAK® SO-8 |
Base Product Number | SIRA20 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 6.3W (Ta), 104W (Tc) |
Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 82A (Ta), 335A (Tc) |
Rds On (Max) @ Id, Vgs | 0.58mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
Vgs (Max) | +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds | 9950 pF @ 15 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |