Out of stock
$0.87860
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $0.87860 | |
200 | $0.34011 | |
500 | $0.32807 | |
1000 | $0.32218 |
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Request for SIS415DNT-T1-GE3
SIS415DNT-T1-GE3
MOSFET P-CH 20V 35A PPAK1212-8
Order Code:
CIS1001989
Manufacturer Part No:
SIS415DNT-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8
Detailed Description:
P-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Technical Datasheet:
SIS415DNT-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 |
Supplier Device Package | PowerPAK® 1212-8 |
Base Product Number | SIS415 |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 5460 pF @ 10 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |