Out of stock
$0.70880
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.70880 | |
| 200 | $0.27431 | |
| 500 | $0.26481 | |
| 1000 | $0.25999 |
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Request for SIS427EDN-T1-GE3
SIS427EDN-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8
Order Code:
CIS1000173
Manufacturer Part No:
SIS427EDN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8
Detailed Description:
P-Channel 30 V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Technical Datasheet:
Buy with Confidence
SIS427EDN-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Supplier Device Package | PowerPAK® 1212-8 |
| Base Product Number | SIS427 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1930 pF @ 15 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |