Out of stock
$1.12140
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.12140 | |
| 200 | $0.43398 | |
| 500 | $0.42053 | |
| 1000 | $0.41391 |
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Request for SIS590DN-T1-GE3
SIS590DN-T1-GE3
COMBO N- & P-CHANNEL 100 V (D-S)
Order Code:
CIS1000020
Manufacturer Part No:
SIS590DN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8 Dual
Detailed Description:
Mosfet Array N and P-Channel 100V 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Technical Datasheet:
Buy with Confidence
SIS590DN-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Power - Max | 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | Standard |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |