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$1.00740
Standard Package: 3000
Quantity Unit Price
1 $1.00740
200 $0.38996
500 $0.37626
1000 $0.36941

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Request for SIS890ADN-T1-GE3

SIS890ADN-T1-GE3

MOSFET N-CH 100V 7.6A/24.7A PPAK

Order Code:
CIS1001354
Manufacturer Part No:
SIS890ADN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8
Detailed Description:
N-Channel 100 V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Technical Datasheet:
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SIS890ADN-T1-GE3 Information

More Information
Mfr Vishay Siliconix
Series -
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Supplier Device Package PowerPAK® 1212-8
Base Product Number SIS890
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 24.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 50 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected