Out of stock
$0.93510
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $0.93510 | |
200 | $0.36188 | |
500 | $0.34926 | |
1000 | $0.34309 |
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Request for SISH892BDN-T1-GE3
SISH892BDN-T1-GE3
N-CHANNEL 100 V (D-S) MOSFET POW
Order Code:
CIS1001280
Manufacturer Part No:
SISH892BDN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® SO-8
Detailed Description:
N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC
SISH892BDN-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Supplier Device Package | PowerPAK® SO-8DC |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 3.4W (Ta), 29W (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 30.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 50 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |