Out of stock
$1.43210
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $1.43210 | |
200 | $0.55465 | |
500 | $0.53618 | |
1000 | $0.52501 |
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Request for SISS08DN-T1-GE3
SISS08DN-T1-GE3
MOSFET N-CH 25V 53.9/195.5A PPAK
Order Code:
CIS1000911
Manufacturer Part No:
SISS08DN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8S
Detailed Description:
N-Channel 25 V 53.9A (Ta), 195.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Technical Datasheet:
SISS08DN-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8S |
Supplier Device Package | PowerPAK® 1212-8S |
Base Product Number | SISS08 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 53.9A (Ta), 195.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.23mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
Vgs (Max) | +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 3670 pF @ 12.5 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |