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Out of stock
$11.00030
Standard Package: 800
Quantity Unit Price
1 $11.00030
200 $4.25822
500 $4.10751
800 $4.03491

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Request for SQM100N10-10_GE3

SQM100N10-10_GE3

MOSFET N-CH 100V 100A TO263

Order Code:
CIS1001316
Manufacturer Part No:
SQM100N10-10_GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 100 V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Technical Datasheet:
Buy with Confidence

SQM100N10-10_GE3 Information

More Information
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D²Pak)
Base Product Number SQM100
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 375W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected