Out of stock
$11.00030
Standard Package:
800
| Quantity | Unit Price | |
|---|---|---|
| 1 | $11.00030 | |
| 200 | $4.25822 | |
| 500 | $4.10751 | |
| 800 | $4.03491 |
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Request for SQM100N10-10_GE3
SQM100N10-10_GE3
MOSFET N-CH 100V 100A TO263
Order Code:
CIS1001316
Manufacturer Part No:
SQM100N10-10_GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 100 V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Technical Datasheet:
Buy with Confidence
SQM100N10-10_GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D²Pak) |
| Base Product Number | SQM100 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 375W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8050 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |